{"created":"2023-06-20T13:23:24.065562+00:00","id":282,"links":{},"metadata":{"_buckets":{"deposit":"eb3ad024-08f2-4910-848a-ff9302515c58"},"_deposit":{"created_by":3,"id":"282","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"282"},"status":"published"},"_oai":{"id":"oai:kougei.repo.nii.ac.jp:00000282","sets":["12:17:54:55"]},"author_link":["757","761","759","760","758","762","763","764","756","765"],"item_2_biblio_info_12":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1996","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"99","bibliographicPageStart":"92","bibliographicVolumeNumber":"19","bibliographic_titles":[{"bibliographic_title":"東京工芸大学工学部紀要"},{"bibliographic_title":"The Academic Reports, the Faculty of Engineering, Tokyo Polytechnic University","bibliographic_titleLang":"en"}]}]},"item_2_description_11":{"attribute_name":"抄録(英)","attribute_value_mlt":[{"subitem_description":"The vib-rotational spectrum of the 2ν_1+ν_5, ν_1+ν_2+3ν_5 and ν_1+ν_3+2ν_4 combination bands of acetylene were measured using a GaAs semiconductor laser at the wavenumber region from 7400 to 7700 cm^<-1> and thc rotational fine structures of the P-, R- and Q-branches were assigned. The formulation describing the spectral line positions by a third order polynomial of J (J+1) with the effective spcctroscopic parameters of ν^<eff>_0, B^<eff>_v, and H^<eff>_v was obtained using sccond order pertubation theory to take the l-type resonance effect into consideration. The spectroscopic constants and the l-type doubling constants were calculated from the effective rotational parameters determined using a least squares fitting procedure for the e-and f-levels.","subitem_description_type":"Other"}]},"item_2_description_15":{"attribute_name":"表示順","attribute_value_mlt":[{"subitem_description":"17","subitem_description_type":"Other"}]},"item_2_description_16":{"attribute_name":"アクセション番号","attribute_value_mlt":[{"subitem_description":"KJ00001512057","subitem_description_type":"Other"}]},"item_2_description_8":{"attribute_name":"記事種別(日)","attribute_value_mlt":[{"subitem_description":"論文","subitem_description_type":"Other"}]},"item_2_description_9":{"attribute_name":"記事種別(英)","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_2_source_id_1":{"attribute_name":"雑誌書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AN00159741","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_19":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"03876055","subitem_source_identifier_type":"ISSN"}]},"item_2_text_6":{"attribute_name":"著者所属(日)","attribute_value_mlt":[{"subitem_text_value":"菊水電子工業(株)"},{"subitem_text_value":"東京工芸大学工学部工学研究科電子工学専攻"},{"subitem_text_value":"東京工芸大学工学部工学研究科電子工学専攻"},{"subitem_text_value":"東京工芸大学工学部"},{"subitem_text_value":"東京工芸大学工学部電子工学専攻"}]},"item_2_title_3":{"attribute_name":"論文名よみ","attribute_value_mlt":[{"subitem_title":"コウタイイキハチョウカヘン GaAsハンドウタイレーザ ニヨル 1.3μmリョウイキ ニオケル アセチレンブンシ ノ シンドウカイテンスペクトル ノ カイセキ"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"大塚, 智昭"},{"creatorName":"オオツカ, トモアキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"756","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山下, 竜矢"},{"creatorName":"ヤマシタ, タツヤ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"757","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"行谷, 時男"},{"creatorName":"ユキヤ, トキオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"758","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"西宮, 信夫"},{"creatorName":"ニシミヤ, ノブオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"759","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"鈴木, 正夫"},{"creatorName":"スズキ, マサオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"760","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"OHTSUKA, Tomoaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"761","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"YAMASHITA, Tatsuya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"762","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"YUKIYA, Tokio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"763","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"NISHIMIYA, Nobuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"764","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"SUZUKI, Masao","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"765","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-04-21"}],"displaytype":"detail","filename":"KJ00001512057.pdf","filesize":[{"value":"610.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00001512057.pdf","url":"https://kougei.repo.nii.ac.jp/record/282/files/KJ00001512057.pdf"},"version_id":"2c860239-189f-4e5c-9fdb-5fccc2cc0180"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"広帯域波長可変GaAs半導体レーザによる1.3μm領域におけるアセチレン分子の振動回転スペクトルの解析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"広帯域波長可変GaAs半導体レーザによる1.3μm領域におけるアセチレン分子の振動回転スペクトルの解析"},{"subitem_title":"Vib-rotational Analysis on the Combination Bands of Acetylene in the 1.3μm Region Usint a Frequency Tunable GaAs Semiconductor Laser","subitem_title_language":"en"}]},"item_type_id":"2","owner":"3","path":["55"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-04-21"},"publish_date":"2017-04-21","publish_status":"0","recid":"282","relation_version_is_last":true,"title":["広帯域波長可変GaAs半導体レーザによる1.3μm領域におけるアセチレン分子の振動回転スペクトルの解析"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-06-20T14:21:27.116910+00:00"}