{"created":"2023-06-20T13:23:11.736820+00:00","id":108,"links":{},"metadata":{"_buckets":{"deposit":"41152646-b123-478b-9c9d-7723e6c23bde"},"_deposit":{"created_by":3,"id":"108","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"108"},"status":"published"},"_oai":{"id":"oai:kougei.repo.nii.ac.jp:00000108","sets":["12:17:32:33"]},"author_link":["261","257","256","259","263","260","258","262"],"item_2_biblio_info_12":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1985","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"112","bibliographicPageStart":"106","bibliographicVolumeNumber":"8","bibliographic_titles":[{"bibliographic_title":"東京工芸大学工学部紀要"},{"bibliographic_title":"The Academic Reports, the Faculty of Engineering, Tokyo Polytechnic University","bibliographic_titleLang":"en"}]}]},"item_2_description_11":{"attribute_name":"抄録(英)","attribute_value_mlt":[{"subitem_description":"A novel microwave plasma reactor for high rate deposition of a-Si : H films is described with a special attention paid on decreasing plasma maintenance power. The reactor is a coaxial-line type composed of stainless inner conductor and mesh outer conductor covering a quartz tube. Secondary electron emission and ECR effects decrease drastically the plasma maintenance power. Furthermore simple quantitative analysis of infrared absorption spectra of the a-Si : H films is presented also. This is basically the deconvolution of the spectra to two Gaussian functions, using least sqare method, but it contains analytic solutions, in part, to decrease CPU time.","subitem_description_type":"Other"}]},"item_2_description_15":{"attribute_name":"表示順","attribute_value_mlt":[{"subitem_description":"16","subitem_description_type":"Other"}]},"item_2_description_16":{"attribute_name":"アクセション番号","attribute_value_mlt":[{"subitem_description":"KJ00001511909","subitem_description_type":"Other"}]},"item_2_description_8":{"attribute_name":"記事種別(日)","attribute_value_mlt":[{"subitem_description":"論文","subitem_description_type":"Other"}]},"item_2_description_9":{"attribute_name":"記事種別(英)","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_2_source_id_1":{"attribute_name":"雑誌書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AN00159741","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_19":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"03876055","subitem_source_identifier_type":"ISSN"}]},"item_2_text_6":{"attribute_name":"著者所属(日)","attribute_value_mlt":[{"subitem_text_value":"東京工芸大学工学部電子工学科"},{"subitem_text_value":"東京工芸大学工学部電子工学科"},{"subitem_text_value":"東京工芸大学工学部電子工学科"},{"subitem_text_value":"東京工芸大学工学部電子工学科"}]},"item_2_title_3":{"attribute_name":"論文名よみ","attribute_value_mlt":[{"subitem_title":"ECRプラズマ ニ ヨル a-Si : Hマク ノ コウソクセイマクヨウ ハンノウソウチ ト セイセイマク ノ セキガイキュウシュウ スペクトラム ノ カンイテイリョウ ブンセキホウ"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"青木, 彪"},{"creatorName":"アオキ, タケシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"256","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"加藤, 静一"},{"creatorName":"カトウ, セイイチ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"257","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"渡部, 明美"},{"creatorName":"ワタベ, アケミ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"258","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武, 邦明"},{"creatorName":"タケ, クニアキ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"259","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"AOKI, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"260","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"KATOH, Seiichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"261","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"WATABE, Akemi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"262","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"TAKE, Kuniaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"263","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-04-21"}],"displaytype":"detail","filename":"KJ00001511909.pdf","filesize":[{"value":"457.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00001511909.pdf","url":"https://kougei.repo.nii.ac.jp/record/108/files/KJ00001511909.pdf"},"version_id":"9c026a06-8af0-40a0-86c6-72a5e34bb3aa"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"ECRプラズマによるa-Si : H膜の高速成膜用反応装置と生成膜の赤外吸収スペクトラムの簡易定量分析法","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ECRプラズマによるa-Si : H膜の高速成膜用反応装置と生成膜の赤外吸収スペクトラムの簡易定量分析法"},{"subitem_title":"ECR Plasma Reactor for High Rate Deposition of a-Si : H Films and a Simple Quantitative Analysis of their Infrared Absorption Spectra","subitem_title_language":"en"}]},"item_type_id":"2","owner":"3","path":["33"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-04-21"},"publish_date":"2017-04-21","publish_status":"0","recid":"108","relation_version_is_last":true,"title":["ECRプラズマによるa-Si : H膜の高速成膜用反応装置と生成膜の赤外吸収スペクトラムの簡易定量分析法"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-06-20T14:24:50.400765+00:00"}