{"created":"2023-06-20T13:23:11.617233+00:00","id":106,"links":{},"metadata":{"_buckets":{"deposit":"c2dcc965-95a0-4af7-af7a-2a57c2d63009"},"_deposit":{"created_by":3,"id":"106","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"106"},"status":"published"},"_oai":{"id":"oai:kougei.repo.nii.ac.jp:00000106","sets":["12:17:32:33"]},"author_link":["248","249","251","250"],"item_2_biblio_info_12":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1985","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"93","bibliographicPageStart":"88","bibliographicVolumeNumber":"8","bibliographic_titles":[{"bibliographic_title":"東京工芸大学工学部紀要"},{"bibliographic_title":"The Academic Reports, the Faculty of Engineering, Tokyo Polytechnic University","bibliographic_titleLang":"en"}]}]},"item_2_description_10":{"attribute_name":"抄録(日)","attribute_value_mlt":[{"subitem_description":"周波数を安定化する帰還回路を注入電流源に,出力レベルを安定化する帰還回路を温度制御装置に接続し,GaAs半導体レーザの出力と周波数の同時安定化を行なった.出力や周波数のステップ応答を調べ,システムを二次系で近似し,減衰率を見積った.±0.5mWの範囲で出力を変化させた時の周波数シフトは±1.2MHz,1GHzの周波数掃引に対する出力レベルの変化は0.4μW以下である.出力制御回路の利得と,積分器の時定数を調整し,減衰率0.19,整定時間10sの動作条件を定めることができた.","subitem_description_type":"Other"}]},"item_2_description_11":{"attribute_name":"抄録(英)","attribute_value_mlt":[{"subitem_description":"The simultaneous stabilization of the frequency and output power of a GaAs semiconductor laser has been done by using two kinds of feedback loops, i. e., one is connected to the injection current source for the frequency stabilization and the other to the temperature controller for the power level control. An approximate formula to estimate the effective damping factor similar to that obtained by a second order system is given. The frequency shift to the power level control of ±0.5 mW was ±1.2 MHz. The power level change to the frequency tuning of 1 GHz was O.4 μW. The settling time of 10 s at an effective damping factor of 0.19 was obtained by adjusting the time constant and the loop gain of the feedback loop for the power level eontrol.","subitem_description_type":"Other"}]},"item_2_description_15":{"attribute_name":"表示順","attribute_value_mlt":[{"subitem_description":"14","subitem_description_type":"Other"}]},"item_2_description_16":{"attribute_name":"アクセション番号","attribute_value_mlt":[{"subitem_description":"KJ00001511907","subitem_description_type":"Other"}]},"item_2_description_8":{"attribute_name":"記事種別(日)","attribute_value_mlt":[{"subitem_description":"論文","subitem_description_type":"Other"}]},"item_2_description_9":{"attribute_name":"記事種別(英)","attribute_value_mlt":[{"subitem_description":"Article","subitem_description_type":"Other"}]},"item_2_source_id_1":{"attribute_name":"雑誌書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AN00159741","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_19":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"03876055","subitem_source_identifier_type":"ISSN"}]},"item_2_text_6":{"attribute_name":"著者所属(日)","attribute_value_mlt":[{"subitem_text_value":"東京工芸大学工学部電子工学科"},{"subitem_text_value":"東京工芸大学工学部電子工学科"}]},"item_2_title_3":{"attribute_name":"論文名よみ","attribute_value_mlt":[{"subitem_title":"ファブリペロカンショウケイ オ モチイテ ドウジアンテイカ シタ GaAsハンドウタイ レーザ ノ シュウハスウ オヨビ シュツリョク ノ オウトウトクセイ"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"鈴木, 正夫"},{"creatorName":"スズキ, マサオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"248","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山口, 静夫"},{"creatorName":"ヤマグチ, シズオ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"249","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"SUZUKI, Masao","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"250","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"YAMAGUCHI, Shizuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"251","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-04-21"}],"displaytype":"detail","filename":"KJ00001511907.pdf","filesize":[{"value":"323.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"KJ00001511907.pdf","url":"https://kougei.repo.nii.ac.jp/record/106/files/KJ00001511907.pdf"},"version_id":"3bb523e1-785a-41de-9f29-633f3a72219d"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"ファブリペロ干渉計を用いて同時安定化したGaAs半導体レーザの周波数及び出力の応答特性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ファブリペロ干渉計を用いて同時安定化したGaAs半導体レーザの周波数及び出力の応答特性"},{"subitem_title":"Response Characteristics of the Frequency and Output Power of a GaAs Semiconductor Laser Simultaneously Stalilized by Use of a Fabry-Perot Interferometer","subitem_title_language":"en"}]},"item_type_id":"2","owner":"3","path":["33"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-04-21"},"publish_date":"2017-04-21","publish_status":"0","recid":"106","relation_version_is_last":true,"title":["ファブリペロ干渉計を用いて同時安定化したGaAs半導体レーザの周波数及び出力の応答特性"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-06-20T14:24:53.699339+00:00"}